PERFORMANCES OF HIGH-K DIELECTRIC MATERIALS (Al2O3, HfO2, ZrO2) FOR LIQUID DIELECTROPHORESIS (LDEP) MICROFLUIDIC DEVICES
نویسندگان
چکیده
This paper reports performances of improved Liquid Dielectrophoresis (LDEP) devices made of Al2O3, HfO2 or ZrO2 as dielectric layers, rather than using classical dielectric layers (SiN, SU-8 resin, SiO2...). These layers have been evaluated on several parameters, such as the threshold actuation voltage, the resistance to the electric field and the droplet generation process. The High-K materials implementation open-up new perspectives for a low-voltage, robust LDEP transduction mechanism and promotes it as a relatively relevant and promising liquid handling technique for sample preparation in μTAS devices.
منابع مشابه
Optimization of Liquid DiElectroPhoresis (LDEP) Digital Microfluidic Transduction for Biomedical Applications
Digital microfluidic has recently been under intensive study, as an effective method to carry out liquid manipulation in Lab-On-a-Chip (LOC) systems. Among droplet actuation forces, ElectroWetting on Dielectric (EWOD) and Liquid DiElectroPhoresis (LDEP) are powerful tools, used in many LOC platforms. Such digital microfluidic transductions do not require integration of complex mechanical compon...
متن کاملHigh-k Gate Dielectrics of Thin Films with its Technological Applications –A Review
High-k gate dielectrics are used to suppress excessive transistor gate leakage and power consumption could speed up the introduction of metal gates in complementary metal oxide semiconductor (CMOS) transistors. Many new oxides are being evaluated as gate dielectrics, such as Al2O3, Y2O3, La2O3, Gd2O3, HfO2, ZrO2, and TiO2, BaZrO3, ZrSiO4 and HfSiO4. Ru, RuO2 and SrRuO3 gate electrodes grown on ...
متن کاملA Comparative Analysis of Gate Leakage and Performance of High-K Nanoscale CMOS Logic Gates
•Several materials have been investigated for use in nano-CMOS technology, such as ZrO2, TiO2, BST, HfO2, Al2O3, SiON, and Si3N4. •Intel has recently prototyped a processor called Penryn using such transistors of 45nm technology. •For compact modeling based study of high-K non-classical transistors using BSIM4/5, two possible options can be considered: (i) varying the model parameter in the mod...
متن کاملDevelopment of High-k Gates for Advances CMOS Devices
Development of High-k Gates for Advances CMOS Devices High dielectric constant (high-k) materials, such as hafnium oxide (HfO2), zirconium oxide (ZrO2), alumina (Al2O3), and their silicates, have drawn a great deal of attention in recent years for potential use as gate dielectrics in advanced CMOS processes [1]. With high dielectric constants, gate dieletrics can be made thicker than SiO2 while...
متن کاملCharacterization of Sol-Gel-Derived and Crystallized HfO2, ZrO2, ZrO2-Y2O3 Thin Films on Si(001) Wafers with High Dielectric Constant
The sol-gel method produces amorphous or crystalline thin gel films of metallic solid compounds by solidifying a sol formed by hydrolyzing and polymerizing a solution containing metallic compounds. Sol-gel processes are widely employed in the field of chemistry to prepare ceramic powders and thin films of hafnium oxide (HfO2) (Nishide et al., 2000) and zirconium oxide (ZrO2) ( Liu et al., 2002)...
متن کامل